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PNP-65°C~150°C TJ1mA1 Elements3 TerminationsSILICONPNPTO-220-3TubeThrough Hole
- Manufacturer: ON Semiconductor
- NO: 598-2N6107G
- Package: TO-220-3
- Datasheet:
- Stock: 7235
- Description: PNP-65°C~150°C TJ1mA1 Elements3 TerminationsSILICONPNPTO-220-3TubeThrough Hole(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -70V |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -7A |
| Frequency | 10MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N6107 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 10MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 70V |
| Max Collector Current | 7A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A 4V |
| Current - Collector Cutoff (Max) | 1mA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 3A, 7A |
| Collector Emitter Breakdown Voltage | 70V |
| Transition Frequency | 10MHz |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Height | 15.748mm |
| Length | 10.2616mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2N6107G Overview
In this device, the DC current gain is 30 @ 2A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3.5V allows maximum design flexibility.When VCE saturation is 3.5V @ 3A, 7A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -7A.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Collector current can be as low as 7A volts at its maximum.
2N6107G Features
the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz
2N6107G Applications
There are a lot of ON Semiconductor 2N6107G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
