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2N6039G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6039G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 8942
- Description: 2N6039G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A 3V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 25MHz |
| Collector Emitter Saturation Voltage | 2V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 4A |
| Height | 2.66mm |
| Length | 11.04mm |
| Width | 7.74mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N6039 |
| Pin Count | 3 |
2N6039G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).A constant collector voltage of 4A is necessary for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor 2N6039G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
