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2N6038G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6038G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 7803
- Description: 2N6038G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N6038 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A 3V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 25MHz |
| Collector Emitter Saturation Voltage | 2V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 4A |
| Height | 11.04mm |
| Length | 7.74mm |
| Width | 2.66mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
2N6038G Overview
DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 40mA, 4A.A constant collector voltage of 4A is necessary for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 25MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
2N6038G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6038G Applications
There are a lot of ON Semiconductor 2N6038G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
