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2N5962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5962
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2948
- Description: 2N5962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW NOISE |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Reach Compliance Code | unknown |
| Current Rating | 100mA |
| Base Part Number | 2N5962 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 2nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 600 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
2N5962 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 600 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 500μA, 10mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2N5962 Features
the DC current gain for this device is 600 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 8V
the current rating of this device is 100mA
2N5962 Applications
There are a lot of ON Semiconductor 2N5962 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
