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2N5885G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5885G
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 5753
- Description: 2N5885G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 25A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A 4V |
| Current - Collector Cutoff (Max) | 2mA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Height | 8.51mm |
| Length | 39.37mm |
| Width | 26.67mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 200W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 600mA |
| Frequency | 4MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N5885 |
| Pin Count | 2 |
| Number of Elements | 1 |
2N5885G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10A 4V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 6.25A, 25A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).There is a transition frequency of 4MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
2N5885G Features
the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 6.25A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 4MHz
2N5885G Applications
There are a lot of ON Semiconductor 2N5885G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
