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2N5884G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5884G
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 494
- Description: 2N5884G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Base Part Number | 2N5884 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 25A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A 4V |
| Current - Collector Cutoff (Max) | 2mA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Height | 26.67mm |
| Length | 39.37mm |
| Width | 8.509mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 17 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 200W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -25A |
| Frequency | 4MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
2N5884G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 10A 4V DC current gain.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 6.25A, 25A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -25A.Parts of this part have transition frequencies of 4MHz.Maximum collector currents can be below 25A volts.
2N5884G Features
the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 6.25A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is -25A
a transition frequency of 4MHz
2N5884G Applications
There are a lot of ON Semiconductor 2N5884G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
