2N5794U

2N5794U datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi
  • NO: 523-2N5794U
  • Package: U
  • Datasheet: pdf
  • Stock: 2746
  • Description: 2N5794U datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Surface Mount
Package / Case U
Number of Pins 6
Packaging Bulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation 600mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Polarity NPN
Power Dissipation 600mW
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
JEDEC-95 Code TO-78
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 40
Turn Off Time-Max (toff) 310ns
Turn On Time-Max (ton) 45ns
RoHS Status Non-RoHS Compliant

2N5794U Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.When collector current reaches its maximum, it can reach 600mA volts.

2N5794U Features


the emitter base voltage is kept at 6V

2N5794U Applications


There are a lot of Microsemi Corporation 2N5794U applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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