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2N5686G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5686G
- Package: TO-204AE
- Datasheet:
- Stock: 5626
- Description: 2N5686G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Surface Mount | NO |
| Number of Pins | 2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 300W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50A |
| Frequency | 2MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N5686 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 2MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 50A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A 2V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 2MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 15 |
| Height | 8.51mm |
| Length | 38.86mm |
| Width | 26.67mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2N5686G Overview
DC current gain in this device equals 15 @ 25A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.A VCE saturation (Max) of 5V @ 10A, 50A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50A current rating.As a result, the part has a transition frequency of 2MHz.Maximum collector currents can be below 50A volts.
2N5686G Features
the DC current gain for this device is 15 @ 25A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
a transition frequency of 2MHz
2N5686G Applications
There are a lot of ON Semiconductor 2N5686G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
