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2N5551BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5551BU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 9024
- Description: 2N5551BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 160V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | 600mA |
| Frequency | 300MHz |
| Base Part Number | 2N5551 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 160V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 80 |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
2N5551BU Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.In this part, there is a transition frequency of 100MHz.A maximum collector current of 600mA volts can be achieved.
2N5551BU Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551BU Applications
There are a lot of ON Semiconductor 2N5551BU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
