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2N5550RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5550RLRPG
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 6598
- Description: 2N5550RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 60 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Contact Plating | Copper, Silver, Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 140V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 600mA |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N5550 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
2N5550RLRPG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.A collector emitter saturation voltage of 250mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 50mA.Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 100MHz.Maximum collector currents can be below 600mA volts.
2N5550RLRPG Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550RLRPG Applications
There are a lot of ON Semiconductor 2N5550RLRPG applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
