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2N5401YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5401YTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 6488
- Description: 2N5401YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | -160V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -600mA |
| Frequency | 400MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 2N5401 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 400MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 150V |
| Transition Frequency | 100MHz |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | ROHS3 Compliant |
2N5401YTA Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N5401YTA Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401YTA Applications
There are a lot of ON Semiconductor 2N5401YTA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
