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2N5401TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5401TA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 1778
- Description: 2N5401TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 178.2mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -160V |
| Max Power Dissipation | 625mW |
| Current Rating | -600mA |
| Frequency | 400MHz |
| Base Part Number | 2N5401 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Power - Max | 625mW |
| Gain Bandwidth Product | 300MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 150V |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Current - Collector (Ic) (Max) | 600mA |
| Max Frequency | 400MHz |
| Frequency - Transition | 400MHz |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2N5401TA Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.Single BJT transistor comes in a supplier device package of TO-92-3.The device exhibits a collector-emitter breakdown at 150V.A maximum collector current of 600mA volts is possible.
2N5401TA Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
the supplier device package of TO-92-3
2N5401TA Applications
There are a lot of ON Semiconductor 2N5401TA applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
