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2N5401RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5401RL1G
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 3354
- Description: 2N5401RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | EUROPEAN PART NUMBER |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -150V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | -600mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N5401 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 150V |
| Current - Collector (Ic) (Max) | 600mA |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2N5401RL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).A transition frequency of 100MHz is present in the part.The maximum collector current is 600mA volts.
2N5401RL1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401RL1G Applications
There are a lot of ON Semiconductor 2N5401RL1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
