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PNP-55°C~150°C TJ50nA ICBO1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)BulkThrough Hole
- Manufacturer: Micro Commercial Co
- NO: 543-2N5401-AP
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 7673
- Description: PNP-55°C~150°C TJ50nA ICBO1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)BulkThrough Hole(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 1.5W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Current - Collector (Ic) (Max) | 600mA |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| RoHS Status | ROHS3 Compliant |
2N5401-AP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The device has a 150V maximal voltage - Collector Emitter Breakdown.
2N5401-AP Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5401-AP Applications
There are a lot of Micro Commercial Co 2N5401-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
