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2N5401 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5401
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 1896
- Description: 2N5401 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1996 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -150V |
| Max Power Dissipation | 625mW |
| Current Rating | -600mA |
| Base Part Number | 2N5401 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Power - Max | 625mW |
| Gain Bandwidth Product | 400MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 150V |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Current - Collector (Ic) (Max) | 600mA |
| Max Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Frequency - Transition | 300MHz |
| Collector Base Voltage (VCBO) | -160V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2N5401 Description
2N5401 is intended for use in high-voltage situations where the load consumes very little power (i.e. Current drawn by load is low). Telephone networks contain these types of circuits. It can also be utilized for high voltage loads when you need a simple switching device. The component is very inexpensive and simple to use.
2N5401 Features
Pb-free packaging is available.
Collector breakdown voltage is high.
Up to 100 times DC Current Gain (hFE)
150V maximum voltage between collector and emitter
Trough collector maximum current allowed: 600mA
160 V maximum voltage between collector and base
5V maximum voltage between base and emitter
-55°C to +150°C operating temperature range
0.62 W maximum power dissipation
2N5401 Applications
Switching and amplification for general use
Applications for telephony
Application of high voltage
