2N5339

2N5339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi


  • Manufacturer: Central Semiconductor Corp
  • NO: 154-2N5339
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: pdf
  • Stock: 7237
  • Description: 2N5339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 6W
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 30MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 6W
Transistor Application SWITCHING
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 500mA, 5A
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 1.2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
hFE Min 60
Continuous Collector Current 5A
Turn On Time-Max (ton) 200ns
RoHS Status RoHS Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Published 2001
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99

2N5339 Overview


In this device, the DC current gain is 60 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 5A.Single BJT transistor is recommended to keep the continuous collector voltage at 5A in order to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 30MHz.In extreme cases, the collector current can be as low as 5A volts.

2N5339 Features


the DC current gain for this device is 60 @ 2A 2V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

2N5339 Applications


There are a lot of Central Semiconductor Corp 2N5339 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

In Stock

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