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2N5308 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N5308
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2509
- Description: 2N5308 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 625mW |
| Current Rating | 1.2A |
| Base Part Number | 2N5308 |
| Number of Elements | 1 |
| Polarity | NPN |
| Voltage | 40V |
| Element Configuration | Single |
| Current | 15A |
| Power Dissipation | 625mW |
| Power - Max | 625mW |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 1.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7000 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200μA, 200mA |
| Collector Emitter Breakdown Voltage | 40V |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 1.2A |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 7000 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2N5308 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 7000 @ 2mA 5V.As it features a collector emitter saturation voltage of 1.4V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 200μA, 200mA.The emitter base voltage can be kept at 12V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.2A).Product comes in the supplier's device package TO-92-3.There is a 40V maximal voltage in the device due to collector-emitter breakdown.During maximum operation, collector current can be as low as 1.2A volts.
2N5308 Features
the DC current gain for this device is 7000 @ 2mA 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 200μA, 200mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
the supplier device package of TO-92-3
2N5308 Applications
There are a lot of ON Semiconductor 2N5308 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
