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2N5302G
  • 2N5302G

2N5302G

2N5302G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2N5302G
  • Package: TO-204AA, TO-3
  • Datasheet: pdf
  • Stock: 8391
  • Description: 2N5302G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 13.607771g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 200W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 30A
Frequency 2MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5302
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 30A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 15A 2V
Current - Collector Cutoff (Max) 5mA
Vce Saturation (Max) @ Ib, Ic 3V @ 6A, 30A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 750mV
Collector Base Voltage (VCBO) 60V
hFE Min 15
Height 25.4mm
Length 38.1mm
Width 25.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N5302G Overview


In this device, the DC current gain is 15 @ 15A 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 750mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 6A, 30A.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 30A.As you can see, the part has a transition frequency of 2MHz.Maximum collector currents can be below 30A volts.

2N5302G Features


the DC current gain for this device is 15 @ 15A 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 3V @ 6A, 30A
the current rating of this device is 30A
a transition frequency of 2MHz

2N5302G Applications


There are a lot of ON Semiconductor 2N5302G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting
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