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NPN-55°C~150°C TJ50nA ICBOTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole
- Manufacturer: ON Semiconductor
- NO: 598-2N5089
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2851
- Description: NPN-55°C~150°C TJ50nA ICBOTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 625mW |
| Current Rating | 50mA |
| Base Part Number | 2N5089 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Power - Max | 625mW |
| Gain Bandwidth Product | 50MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100μA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 25V |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 50mA |
| Collector Emitter Saturation Voltage | 500mV |
| Frequency - Transition | 50MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 400 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2N5089 Description
The 2N5089 is a silicon-based NPN amplifier transistor that is commonly used in audio equipment for amplification and other applications. It has a 25 Vdc Collector-Emitter Voltage and a 30 Vdc Collector-Base Voltage. The 2N5089 could deliver a continuous collector current of 50mAdc.
2N5089 Features
NPN is a type of transistor.
VCEO (Voltage Collector to Emitter) = 25 Vdc
30 Vdc Collector to Base Voltage (VCBO)
3.0 Vdc Emitter to Base Voltage (VEBO)
50 mAdc Collector Current (IC)
When IC = 100 Adc and VCE = 5.0 Vdc, the minimum hFE is 400.
When IC = 100 Adc and VCE = 5.0 Vdc, the maximum hFE is 1200.
Current-gain-bandwidth (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Product = 50 Mhz
Current Gain for Small Signals = 450 (min), 1800 (max)
2N5089 Applications
System of amplifiers
High-definition audio system
Topologies with a push-pull effect
Tone adjustment
Changing between applications
