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2N5012 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-2N5012
- Package: TO-205AA, TO-5-3 Metal Can
- Datasheet:
- Stock: 9600
- Description: 2N5012 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA 10V |
| Current - Collector Cutoff (Max) | 10nA ICBO |
| Current - Collector (Ic) (Max) | 200mA |
| Collector Base Voltage (VCBO) | 700V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
2N5012 Overview
In this device, the DC current gain is 30 @ 25mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The maximum collector current is 200mA volts.
2N5012 Features
the DC current gain for this device is 30 @ 25mA 10V
2N5012 Applications
There are a lot of Microsemi Corporation 2N5012 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
