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2N4923 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N4923
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 8130
- Description: 2N4923 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-225AA |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 1995 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 30W |
| Current Rating | 1A |
| Base Part Number | 2N4923 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 30W |
| Power - Max | 30W |
| Gain Bandwidth Product | 3MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 600mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 80V |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 1A |
| Max Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 350V |
| Frequency - Transition | 3MHz |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Height | 11.04mm |
| Length | 7.74mm |
| Width | 2.66mm |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2N4923 Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.Breakdown input voltage is 350V volts.Supplier package TO-225AA contains the product.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1A volts.
2N4923 Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-225AA
2N4923 Applications
There are a lot of ON Semiconductor 2N4923 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
