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2N4402TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N4402TF
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 8146
- Description: 2N4402TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 625mW |
| Current Rating | -600mA |
| Base Part Number | 2N4402 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 150mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2N4402TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 150mA 2V.The collector emitter saturation voltage is 750mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N4402TF Features
the DC current gain for this device is 50 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
2N4402TF Applications
There are a lot of ON Semiconductor 2N4402TF applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
