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Contact2N4401BU
NPN-55°C~150°C TJ1 Elements3 TerminationsSILICONNPNTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole
- Manufacturer: ON Semiconductor
- NO: 598-2N4401BU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 1678
- Description: NPN-55°C~150°C TJ1 Elements3 TerminationsSILICONNPNTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | 600mA |
| Frequency | 250MHz |
| Base Part Number | 2N4401 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Turn Off Time-Max (toff) | 255ns |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
Description
Because the 2N4401BU is an NPN transistor when the base pin is held at the ground, the collector and emitter are left open (reverse biased), and when a signal is applied to the base pin, they are closed (forward-biased). The gain value hfe of 2N4401BU is 500, which determines the transistor's amplification capacity. Because the Collector pin can only carry 800 milliamperes of current, we can't use this transistor to connect loads that draw more than 500 milliamperes. We must feed current to the base pin of a transistor to bias it, and this current (IB) should be limited to 5mA.
Features
? Continuous Collector current (IC) is 500mA
? Collector-Emitter voltage (VCE) is 40 V
? Collector-Base voltage (VCB) is 60V
? Emitter Base Breakdown Voltage (VBE) is 6V
? Halogen Free Available Upon Request By Adding Suffix "-HF"
? Epoxy Meets UL 94 V-0 Flammability Rating
? Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)
? Pb?Free Packages are Available*
? Operating Junction Temperature Range: -55℃ to +150℃
? Storage Temperature Range: -55℃ to +150℃
? Thermal Resistance: 200℃/W Junction to Ambient
? General purpose NPN Transistor
? High DC Current Gain (hFE), typically 80 when IC=10mA
? Transition Frequency is 100MHz
? Available in To-92 Package
Applications
? Speed control of Motors
? Inverter and other rectifier circuits
? Can be used in Darlington Pair
? Can be used to switch high current (up to 500mA) loads
? Be used in the various switching applications
