2N4236

2N4236 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi
  • NO: 523-2N4236
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: pdf
  • Stock: 4191
  • Description: 2N4236 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Supplier Device Package TO-39 (TO-205AD)
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 1W
Base Part Number 2N4236
Number of Elements 1
Polarity NPN
Power Dissipation 1W
Power - Max 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA 1V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 80V

2N4236 Overview


DC current gain in this device equals 30 @ 250mA 1V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.This product comes in a TO-39 (TO-205AD) device package from the supplier.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.In extreme cases, the collector current can be as low as 1A volts.

2N4236 Features


the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-39 (TO-205AD)

2N4236 Applications


There are a lot of Microsemi Corporation 2N4236 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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Please send RFQ , we will respond immediately.