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2N4123TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N4123TFR
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 4504
- Description: 2N4123TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 625mW |
| Current Rating | 200mA |
| Frequency | 250MHz |
| Base Part Number | 2N4123 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Gain Bandwidth Product | 250MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2N4123TFR Overview
In this device, the DC current gain is 50 @ 2mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The maximum collector current is 200mA volts.
2N4123TFR Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
2N4123TFR Applications
There are a lot of ON Semiconductor 2N4123TFR applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
