2N3906T93

PNP 150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2N3906T93
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: pdf
  • Stock: 9520
  • Description: PNP 150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole (Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 1998
JESD-609 Code e3/e2
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN/TIN COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2N3906
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
VCEsat-Max 0.4 V
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
Collector-Base Capacitance-Max 4.5pF
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.