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PNP-55°C~150°C TJ50nA1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Cut Tape (CT)Through Hole
- Manufacturer: ON Semiconductor
- NO: 598-2N3906RLRA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 8606
- Description: PNP-55°C~150°C TJ50nA1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Cut Tape (CT)Through Hole(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn80Pb20) |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -200mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2N3906 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 40V |
| Current - Collector (Ic) (Max) | 200mA |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Turn On Time-Max (ton) | 70ns |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2N3906RLRA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2N3906RLRA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906RLRA Applications
There are a lot of ON Semiconductor 2N3906RLRA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
