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PNP-55°C~150°C TJ1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole
- Manufacturer: ON Semiconductor
- NO: 598-2N3906BU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 7168
- Description: PNP-55°C~150°C TJ1 Elements3 TerminationsSILICONPNPTO-226-3, TO-92-3 (TO-226AA)BulkThrough Hole(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | -200mA |
| Frequency | 250MHz |
| Base Part Number | 2N3906 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Base Voltage (VCBO) | -40V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Turn On Time-Max (ton) | 70ns |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
2N3906BU Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2N3906BU Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906BU Applications
There are a lot of ON Semiconductor 2N3906BU applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
