2N3906-G

2N3906-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi


  • Manufacturer: Comchip Technology
  • NO: 186-2N3906-G
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: pdf
  • Stock: 2907
  • Description: 2N3906-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bag
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position BOTTOM
JESD-30 Code O-PBCY-T3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -400mV
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
RoHS Status ROHS3 Compliant

2N3906-G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 100mA 1V.A collector emitter saturation voltage of -400mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Parts of this part have transition frequencies of 250MHz.A maximum collector current of 200mA volts can be achieved.

2N3906-G Features


the DC current gain for this device is 30 @ 100mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz

2N3906-G Applications


There are a lot of Comchip Technology 2N3906-G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

In Stock

Please send RFQ , we will respond immediately.