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2N3773G
2N3773G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N3773G
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 1788
- Description: 2N3773G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Part Status | Active |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS Status | ROHS3 Compliant |
| Published | 2004 |
| Voltage - Rated DC | 140V |
| Current Rating | 16A |
| Package / Case | TO-204AA, TO-3 |
| Length | 39.37mm |
| Height | 8.51mm |
| Width | 26.67mm |
| Lead Free | Lead Free |
| Number of Terminations | 2 |
| Factory Lead Time | 10 Weeks |
| Weight | 13.607771g |
| REACH SVHC | No SVHC |
| Number of Pins | 2 |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Pbfree Code | yes |
| ECCN Code | EAR99 |
| Contact Plating | Tin |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| Surface Mount | NO |
| Max Power Dissipation | 150W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | 2N3773 |
| Pin Count | 2 |
| Element Configuration | Single |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Power Dissipation | 150W |
| Number of Elements | 1 |
| Subcategory | Other Transistors |
| Transistor Element Material | SILICON |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 16A |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 15 |
| Current - Collector Cutoff (Max) | 10mA |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 8A 4V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 800mA, 8A |
2N3773G Overview
DC current gain in this device equals 15 @ 8A 4V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 1.4V, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.This device has a current rating of 16A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Maximum collector currents can be below 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor 2N3773G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
