2N3772G

2N3772G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2N3772G
  • Package: TO-204AA, TO-3
  • Datasheet: pdf
  • Stock: 8265
  • Description: 2N3772G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 13.607771g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 150W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 20A
Frequency 200kHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N3772
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 200 kHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 10A 4V
Current - Collector Cutoff (Max) 10mA
Vce Saturation (Max) @ Ib, Ic 4V @ 4A, 20A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 0.2MHz
Collector Emitter Saturation Voltage 1.4V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 15
Height 26.67mm
Length 39.37mm
Width 8.509mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N3772G Overview


In this device, the DC current gain is 15 @ 10A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1.4V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 4A, 20A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 20A for this device.A transition frequency of 0.2MHz is present in the part.Maximum collector currents can be below 20A volts.

2N3772G Features


the DC current gain for this device is 15 @ 10A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 4A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 20A
a transition frequency of 0.2MHz

2N3772G Applications


There are a lot of ON Semiconductor 2N3772G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

In Stock

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