2N3772

2N3772 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-2N3772
  • Package: TO-204AA, TO-3
  • Datasheet: pdf
  • Stock: 5282
  • Description: 2N3772 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case TO-204AA, TO-3
Number of Pins 2
Weight 13.607771g
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 150W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Current Rating 20A
Frequency 200kHz
Base Part Number 2N37
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 200 kHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 10A 4V
Current - Collector Cutoff (Max) 10mA
Vce Saturation (Max) @ Ib, Ic 4V @ 4A, 20A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 0.2MHz
Collector Emitter Saturation Voltage 1.4V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 5
VCEsat-Max 4 V
Height 26mm
Length 39.3mm
Width 8.92mm
Radiation Hardening No

2N3772 Description

The 2N3772 is a silicon epitaxial-base NPN transistor mounted in Jedec Jedec TO-3 metal case. The 2N3772 is designed for use in linear amplifiers and inductive switching.

The 2N3772 transistor has a low collector-emitter junction voltage and a forward-biased current break-down capability, among other features. Among its many applications are inductive switching, General Purpose (GP) linear amplifiers, series pas regulators, and a variety of others.


2N3772 Features

  • High power NPN silicon power transistors

  • Designed for linear amplifiers, series pass regulators, and inductive switching applications

  • Forward biased second breakdown current capability IS/b = 2.5A DC at VCE = 60V DC

  • Multicomp Pro products are rated 4.6 out of 5 stars

  • 12-month limited warranty *view Terms & Conditions for details

  • 96% of customers would recommend to a friend

  • Maximum Collector Power Dissipation (Pc): 150 W

  • Maximum Collector-Base Voltage |Vcb|: 100 V

  • Maximum Collector-Emitter Voltage |Vce|: 80 V

  • Maximum Emitter-Base Voltage |Veb|: 7 V

  • Maximum Collector Current |Ic max|: 2 A

  • Max. Operating Junction Temperature (Tj): 200 °C

  • Transition Frequency (ft): 0.2 MHz

  • Forward Current Transfer Ratio (hFE), MIN: 15


2N3772 Applications

  • Linear Amplifiers

  • Inductive Switching

  • Series pas regulators

  • Switching small loads

  • Darlington pair

  • The LED array sequence controller

  • Audio Noise filters


In Stock

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