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2N3716 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-2N3716
- Package: TO-3
- Datasheet:
- Stock: 7125
- Description: 2N3716 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Polarity | NPN |
| Power Dissipation | 5W |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 2 weeks ago) |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Package / Case | TO-3 |
| Number of Pins | 3 |
| Packaging | Bulk |
| Published | 2007 |
| Part Status | Active |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 5W |
| Number of Elements | 1 |
2N3716 Overview
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.When collector current reaches its maximum, it can reach 10A volts.
2N3716 Features
the emitter base voltage is kept at 7V
2N3716 Applications
There are a lot of Microsemi Corporation 2N3716 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
