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2N3700UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-2N3700UB
- Package: 3-SMD, No Lead
- Datasheet:
- Stock: 790
- Description: 2N3700UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 100MHz |
| Collector Base Voltage (VCBO) | 140V |
| Emitter Base Voltage (VEBO) | 7V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
2N3700UB Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 7V to gain high efficiency.100MHz is present in the transition frequency.A maximum collector current of 1A volts can be achieved.
2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2N3700UB Applications
There are a lot of Microsemi Corporation 2N3700UB applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
