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2N3417_D74Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N3417_D74Z
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 4387
- Description: 2N3417_D74Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 625mW |
| Current Rating | 500mA |
| Base Part Number | 2N3417 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 4.5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 50mA |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 180 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2N3417_D74Z Overview
This device has a DC current gain of 180 @ 2mA 4.5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 3mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N3417_D74Z Features
the DC current gain for this device is 180 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
2N3417_D74Z Applications
There are a lot of ON Semiconductor 2N3417_D74Z applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
