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2N3415_D75Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N3415_D75Z
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 4868
- Description: 2N3415_D75Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 625mW |
| Current Rating | 500mA |
| Base Part Number | 2N3415 |
| Element Configuration | Single |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 4.5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 50mA |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Base Voltage (VCBO) | 25V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 180 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2N3415_D75Z Overview
DC current gain in this device equals 180 @ 2mA 4.5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 3mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N3415_D75Z Features
the DC current gain for this device is 180 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
2N3415_D75Z Applications
There are a lot of ON Semiconductor 2N3415_D75Z applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
