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2N2907 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-2N2907
- Package: TO-206AA, TO-18-3 Metal Can
- Datasheet:
- Stock: 638
- Description: 2N2907 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 1.8W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Current Rating | -600mA |
| Frequency | 200MHz |
| Base Part Number | 2N29 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 400mW |
| Power - Max | 1.8W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Turn On Time-Max (ton) | 50ns |
| Height | 5.3mm |
| Length | 5.8mm |
| Width | 5.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2N2907 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.As you can see, the part has a transition frequency of 200MHz.Maximum collector currents can be below 600mA volts.
2N2907 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N2907 Applications
There are a lot of STMicroelectronics 2N2907 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
