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2N2906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N2906
- Package: TO-206AA, TO-18-3 Metal Can
- Datasheet:
- Stock: 5588
- Description: 2N2906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Base Part Number | 2N2906 |
| Power - Max | 400mW |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 10V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 600mA |
| RoHS Status | Non-RoHS Compliant |
2N2906 transistor was designed for use in high-speed switch circuits, DC-to-VHF amplifiers, and circuits for complementary. It is silicon-based PNP epitaxial plane transistors developed to handle small signals and general-purpose switching applications.
2N2906 Features
Collector-Emitter Volt (Vceo): 40V
Collector-Base Volt (Vcbo): 60V
Collector Current (Ic): 0.6A
hfe: 40-120 @ 150mA
Power Dissipation (Ptot): 400mW
Current-Gain-Bandwidth (ftotal): 200MHz
2N2906 Applications
High–speed switching circuits
DC to VHF amplifier applications
Complementary circuitry
