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Contact2N2222AUB
NPN-65°C~200°C TJ50nA1 Elements3 TerminationsSILICONNPN3-LCCBulkSurface Mount
- Manufacturer: TT Electronics/Optek Technology
- NO: 861-2N2222AUB
- Package: 3-LCC
- Datasheet:
- Stock: 2468
- Description: NPN-65°C~200°C TJ50nA1 Elements3 TerminationsSILICONNPN3-LCCBulkSurface Mount(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 25 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-LCC |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | 2N2222AUB |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1mA 10V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 15mA, 500mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 30 |
| Max Junction Temperature (Tj) | 200°C |
| Height | 1.42mm |
| Length | 3.175mm |
| Width | 2.667mm |
| RoHS Status | Non-RoHS Compliant |
2N2222AUB Overview
In this device, the DC current gain is 75 @ 1mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 15mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 250MHz.The maximum collector current is 800mA volts.
2N2222AUB Features
the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 15mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2N2222AUB Applications
There are a lot of TT Electronics/Optek Technology 2N2222AUB applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
