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2N2222AUA
  • 2N2222AUA

2N2222AUA

2N2222AUA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from TT Electronics/Optek Technology stock available at Feilidi


  • Manufacturer: TT Electronics/Optek Technology
  • NO: 861-2N2222AUA
  • Package: 4-CLCC
  • Datasheet: pdf
  • Stock: 4259
  • Description: 2N2222AUA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from TT Electronics/Optek Technology stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-CLCC
Number of Pins 4
Supplier Device Package Ceramic SMD
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Polarity NPN
Element Configuration Single
Power Dissipation 500mW
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 800mA
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 800mA
Height 1.905mm
Length 5.715mm
Width 3.937mm
RoHS Status Non-RoHS Compliant

2N2222AUA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 1mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at 800mA to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.Product comes in the supplier's device package Ceramic SMD.The device exhibits a collector-emitter breakdown at 50V.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

2N2222AUA Features


the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of Ceramic SMD

2N2222AUA Applications


There are a lot of TT Electronics/Optek Technology 2N2222AUA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface
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