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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Type | Switch |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW LEAKAGE CURRENT |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 75V |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Current Rating | 600mA |
| Frequency | 300MHz |
| Base Part Number | 2N22 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Gain Bandwidth Product | 300MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 150mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 40 |
| VCEsat-Max | 1 V |
| Turn Off Time-Max (toff) | 285ns |
| Collector-Base Capacitance-Max | 8pF |
| Height | 5.3mm |
| Length | 5.8mm |
| Width | 5.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
The 2N2222A is a NPN transistor, so the collector and emitter will remain open (reverse bias) while the footing remains on (reverse bias), while the collector and emitter will be closed (forward bias) when a signal is provided to the footing. The gain value of 2N2222A is from 110 to 800, which determines the amplification ability of the transistor.
The polarity of Transistor – NPN
Type of termination –Through Hole
Configuration of pin – a
Number of Pins -3
The voltage from collector terminal to emitter is 50V once the base terminal is open
The voltage from the emitter to the base terminal is 6V once the collector terminal is open
The voltage from the collector terminal to the base is 75V once the emitter terminal is open
The current Gain of DC is 100
DC collector current is 800mA
Accessible in the Package of To-92
Total power dissipation is 1W
The maximum base current is 5mA
Input capacitance is 25pF
Fall time is 60ns
Output capacitance is 8pF
Turn-on time is 25ns
This kind of transistor is mainly used for amplifying current
This transistor can be used as a switch for automatically switch ON/OFF any appliances.
It is used for PWM due to its quick response
Because of its fast response time, it can be used for pulse width modulation.
It is typically used in automation & embedded projects.
Audio Preamplifiers
Sensor Circuits
Audio Amplifier Stages
Used to switch several loads simultaneously
RF Circuits
Darlington Pairs
These transistors are used in Motor drive circuits like VFD or variable frequency drives.
Used in Rectifier Circuits & DC Inverters
It is used as an amplifier to amplify voltage, current & power.
Darlington pair transistors are used for attaining the maximum current from the emitter terminal to the collector.
As compared to the normal NPN BC547 transistor, the 2N2222 is extremely similar, but 2N2222 allows 800mA of collector current & also 652mW of power dissipation which can be utilized for driving larger loads as compared toBC547.
So, the 2N2222 transistor is the best choice for switching high current loads
Please send RFQ , we will respond immediately.