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2N2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor stock available at Feilidi
- Manufacturer: Central Semiconductor Corp
- NO: 154-2N2222A
- Package: TO-18
- Datasheet:
- Stock: 5960
- Description: 2N2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Turn Off Time-Max (toff) | 285ns |
| Height | 5.33mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Package / Case | TO-18 |
| Number of Pins | 3 |
| Packaging | Bulk |
| Published | 2003 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Frequency | 250MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation-Max | 500mW |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Frequency (Max) | 300MHz |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 300MHz |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 800mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 1V |
| Frequency - Transition | 300MHz |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| DC Current Gain-Min (hFE) | 40 |
| Max Junction Temperature (Tj) | 200°C |
2N2222A Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 1V.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 300MHz.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
2N2222A Features
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
2N2222A Applications
There are a lot of Central Semiconductor 2N2222A applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
