2DD2656-7

2DD2656-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-2DD2656-7
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 107
  • Description: 2DD2656-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 270MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2DD2656
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Power - Max 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 270MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 270MHz
Collector Emitter Saturation Voltage 350mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Height 1mm
Length 2.15mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

2DD2656-7 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 100mA 2V.A collector emitter saturation voltage of 350mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 25mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 270MHz.An input voltage of 30V volts is the breakdown voltage.The maximum collector current is 1A volts.

2DD2656-7 Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 270MHz

2DD2656-7 Applications


There are a lot of Diodes Incorporated 2DD2656-7 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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