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2DB1132Q-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-2DB1132Q-13
- Package: TO-243AA
- Datasheet:
- Stock: 8355
- Description: 2DB1132Q-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 19 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Supplier Device Package | SOT-89-3 |
| Weight | 51.993025mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Frequency | 190MHz |
| Base Part Number | 2DB1132 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Power - Max | 1W |
| Gain Bandwidth Product | 190MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 32V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 3V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 32V |
| Voltage - Collector Emitter Breakdown (Max) | 32V |
| Current - Collector (Ic) (Max) | 1A |
| Collector Emitter Saturation Voltage | -125mV |
| Max Breakdown Voltage | 32V |
| Frequency - Transition | 190MHz |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.48mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
2DB1132Q-13 Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -125mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.A breakdown input voltage of 32V volts can be used.Product comes in the supplier's device package SOT-89-3.This device displays a 32V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below 1A volts.
2DB1132Q-13 Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the supplier device package of SOT-89-3
2DB1132Q-13 Applications
There are a lot of Diodes Incorporated 2DB1132Q-13 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
