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2DA1971-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-2DA1971-7
- Package: TO-243AA
- Datasheet:
- Stock: 8335
- Description: 2DA1971-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.5W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2DA1971 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 75MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 40mA, 200mA |
| Collector Emitter Breakdown Voltage | 400V |
| Max Frequency | 75MHz |
| Transition Frequency | 75MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | -400V |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -500mA |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2DA1971-7 Overview
In this device, the DC current gain is 140 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 200mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.A transition frequency of 75MHz is present in the part.This device can take an input voltage of 400V volts before it breaks down.Maximum collector currents can be below 500mA volts.
2DA1971-7 Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 40mA, 200mA
the emitter base voltage is kept at -7V
a transition frequency of 75MHz
2DA1971-7 Applications
There are a lot of Diodes Incorporated 2DA1971-7 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
