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2DA1774QLP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-2DA1774QLP-7B
- Package: 3-UFDFN
- Datasheet:
- Stock: 6666
- Description: 2DA1774QLP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-UFDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 250mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2DA1774 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -100mA |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
2DA1774QLP-7B Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -100mA.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2DA1774QLP-7B Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2DA1774QLP-7B Applications
There are a lot of Diodes Incorporated 2DA1774QLP-7B applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
