2DA1774QLP-7

2DA1774QLP-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-2DA1774QLP-7
  • Package: 3-UFDFN
  • Datasheet: pdf
  • Stock: 7517
  • Description: 2DA1774QLP-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 21 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 250mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2DA1774
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Case Connection COLLECTOR
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 100MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Height 470μm
Length 1mm
Width 600μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

2DA1774QLP-7 Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In the part, the transition frequency is 100MHz.Input voltage breakdown is available at 40V volts.Collector current can be as low as 100mA volts at its maximum.

2DA1774QLP-7 Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

2DA1774QLP-7 Applications


There are a lot of Diodes Incorporated 2DA1774QLP-7 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

In Stock

Please send RFQ , we will respond immediately.