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15C01M-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-15C01M-TL-E
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 3267
- Description: 15C01M-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 300mW |
| Pin Count | 3 |
| Element Configuration | Single |
| Gain Bandwidth Product | 330MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 200mA |
| Collector Emitter Breakdown Voltage | 15V |
| Max Frequency | 330MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 15V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 300 |
| Height | 900μm |
| Length | 2mm |
| Width | 1.25mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
15C01M-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.A collector emitter saturation voltage of 150mV allows maximum design flexibility.When VCE saturation is 300mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 15V volts.In extreme cases, the collector current can be as low as 700mA volts.
15C01M-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
15C01M-TL-E Applications
There are a lot of ON Semiconductor 15C01M-TL-E applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
