Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Output Current | Forward Current | Forward Voltage | Max Surge Current | Continuous Drain Current (ID) | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Application | Continuous Collector Current | FET Technology | Speed | Power - Max | Highest Frequency Band | Diode Element Material | Power Dissipation-Max | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Number of Phases | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Reverse Voltage (DC) | Protocol | Current - Test | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | hFE Min | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Collector-Base Capacitance-Max | Noise Figure (dB Typ @ f) | Frequency - Transition | Voltage - Test | Number of Drivers/Receivers | Vce Saturation (Max) @ Ib, Ic |
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1SS184S,LF(D | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.10.00.70 | DUAL | GULL WING | 125°C | Common Cathode | 2 | R-PDSO-G3 | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.15W | 4ns | Standard | 80V | 100mA | 0.1A | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS11(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshiba-crs11te85lqm-datasheets-2759.pdf | SOD-123F | 12 Weeks | 2 | No | CRS11 | Single | S-FLAT (1.6x3.5) | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA | 30V | 20A | Schottky | 30V | 1A | 30V | 30V | 1.5mA @ 30V | 360mV @ 1A | 1A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAS16,LM | Toshiba Semiconductor and Storage | $0.13 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tbav70lm-datasheets-8370.pdf | SOT-23-3 Flat Leads | 12 Weeks | SOT-23-3 | Standard Recovery >500ns, > 200mA (Io) | Standard | 80V | 215mA | 80V | 215mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CBS05F30,L3F | Toshiba Semiconductor and Storage | $2.37 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-882 | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 118pF @ 0V 1MHz | 30V | 50μA @ 30V | 500mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CBS10F40,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cbs10f40l3f-datasheets-3894.pdf | SOD-882 | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 74pF @ 0V 1MHz | 40V | 20μA @ 40V | 700mV @ 1A | 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS10I30A(TE85L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 150°C | -55°C | RoHS Compliant | 2011 | SC-76, SOD-323 | 12 Weeks | No | Single | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60μA | 30V | 20A | Schottky | 50pF @ 10V 1MHz | 60μA @ 30V | 390mV @ 700mA | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS17(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2017 | SOD-128 | 12 Weeks | 2 | Single | 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 30V | 30A | Schottky | 90pF @ 10V 1MHz | 100μA @ 30V | 480mV @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRH01(TE85R,Q,M) | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | SOD-123F | 12 Weeks | 2 | No | CRH01 | Single | S-FLAT (1.6x3.5) | 1A | 980mV | 15A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 15A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 200V | 10μA @ 200V | 980mV @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS15I30B(TE85L,QM | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOD-123F | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 82pF @ 10V 1MHz | 30V | 100μA @ 30V | 400mV @ 1.5A | 1.5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS03(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -40°C | Non-RoHS Compliant | 2004 | 30V | 3A | SOD-128 | 190pF | Contains Lead | 2 | no | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | Standard | DUAL | FLAT | CMS03 | 2 | Single | 1 | Rectifier Diodes | R-PDSO-F2 | 3A | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 40A | Schottky | 30V | 3A | 1 | 500μA @ 30V | 450mV @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLH07(TE16L,NMB,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh07te16lnmbq-datasheets-2704.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 400V | 10μA @ 400V | 1.8V @ 5A | 5A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLH03(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh03te16lq-datasheets-2694.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 400V | 3A DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8E65C,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2014 | TO-220-2 | 12 Weeks | 6.000006g | 2 | No | Single | TO-220-2L | 8A | 1.7V | No Recovery Time > 500mA (Io) | 40A | 90μA | 650V | 40A | 0ns | Silicon Carbide Schottky | 650V | 8A | 44pF @ 650V 1MHz | 650V | 90μA @ 650V | 1.7V @ 8A | 8A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT3S111(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | YES | Other Transistors | 12dB | Single | NPN | 0.7W | 700mW | 9000MHz | 6V | 100mA | NPN | 200 @ 30mA 5V | 1.2dB @ 1GHz | 11.5GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5095-R(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshiba-2sc5095rte85lf-datasheets-2888.pdf | SC-70, SOT-323 | 3 | 16 Weeks | EAR99 | LOW NOISE | Copper, Silver, Tin | unknown | 8541.21.00.75 | 100mW | DUAL | GULL WING | 3 | Single | 1 | Other Transistors | 13dB ~ 7.5dB | Not Qualified | R-PDSO-G3 | 10 GHz | SILICON | AMPLIFIER | NPN | 100mW | ULTRA HIGH FREQUENCY B | 10V | 10V | 10V | 15mA | 10000MHz | 20V | 1.5V | 50 | NPN | 50 @ 7mA 6V | 0.85pF | 1.8dB @ 2GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK209-BL(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | 1kHz | DEPLETION MODE | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 3 | 52 Weeks | 7.994566mg | 3 | Copper, Silver, Tin | No | 150mW | DUAL | GULL WING | Single | 1 | 1dB | 14mA | AMPLIFIER | JUNCTION | 500μA | N-Channel JFET | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5084YTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 7 Weeks | EAR99 | unknown | 150mW | Single | Other Transistors | 11dB | 7 GHz | NPN | 150mW | 12V | 12V | 12V | 80mA | 5000MHz | 20V | 3V | 80 | NPN | 120 @ 20mA 10V | 1.1dB @ 1GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62064AFG,S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | -40°C~85°C | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2011 | 16-BSOP (0.252, 6.40mm Width) + 2 Heat Tabs | 5V | TD62064A | 16-HSOP | RS232 | 4/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62308AFG,S,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 16-BSOP (0.252, 6.40mm Width) + 2 Heat Tabs | 4.5V~5.5V | 4/0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C03FU-A(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | unknown | 200mW | Other Transistors | Single | NPN | 200mW | 20V | 20V | 100mV | 300mA | 100nA ICBO | 2 NPN (Dual) | 200 @ 4mA 2V | 30MHz | 100mV @ 3mA, 30mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2803APG,CN | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 2012 | 18-DIP (0.300, 7.62mm) | ULN280*A | 1.47W | 50V | 500mA | 8 NPN Darlington | 1000 @ 350mA 2V | 1.6V @ 500μA, 350mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1A01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-74, SOT-457 | 4 Weeks | 6 | PNP | 300mW | Dual | 80MHz | 300mW | 50V | 50V | 100mV | 300mV | 150mA | 50V | 5V | 120 | 100nA ICBO | 2 PNP (Dual) | 200 @ 2mA 6V | 300mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1586-GR,LF | Toshiba Semiconductor and Storage | $0.12 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2015 | SC-70, SOT-323 | 12 Weeks | 6.208546mg | Silver, Tin | PNP | 100mW | Single | USM | 80MHz | 100mW | 50V | 50V | 100mV | 50V | 150mA | 50V | 150mA | 50V | 5V | 70 | 100nA ICBO | PNP | 200 @ 2mA 6V | 80MHz | 300mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMBT3906,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 320mW | 320mW | 50V | 50V | 400mV | 150mA | 100nA ICBO | PNP | 100 @ 10mA 1V | 250MHz | 400mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1362-GR,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 200mW | 15V | 800mA | 100nA ICBO | PNP | 200 @ 100mA 1V | 120MHz | 200mV @ 8mA, 400mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1588-GR,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-70, SOT-323 | 12 Weeks | 6.208546mg | yes | 100mW | 200MHz | -500mA | 100mW | 30V | 30V | -250mV | 250mV | 500mA | -35V | -5V | 25 | 100nA ICBO | PNP | 200 @ 100mA 1V | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2712-BL,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | NPN | 150mW | Single | S-Mini | 80MHz | 150mW | 100mV | 50V | 150mA | 50V | 150mA | 60V | 5V | 70 | 100nA ICBO | NPN | 70 @ 2mA 6V | 80MHz | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC012(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2011 | /files/toshibasemiconductorandstorage-ttc012q-datasheets-4515.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 18 Weeks | 3 | No | 1.1W | 1.1W | 1 | 375V | 375V | 2A | 800V | 10μA ICBO | NPN | 100 @ 300mA 5V | 1V @ 62.5mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3303-Y(T6L1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 120MHz | RoHS Compliant | 2013 | /files/toshiba-2sc3303yt6l1nq-datasheets-9294.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | Silver, Tin | No | 1W | Single | 1W | 1 | 120MHz | 80V | 200mV | 80V | 5A | 100V | 7V | 70 | 1μA ICBO | NPN | 120 @ 1A 1V | 400mV @ 150mA, 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1425-Y,T2F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1425yt2fj-datasheets-0993.pdf | SC-71 | 1W | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA |
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