Products
Manufacturer
RFQ
NEWS
ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Sensing Method | Capacitance | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Voltage - Input (Max) | Feature | Polarity | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Number of Circuits | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Data Rate | Max Output Current | Polarization | Output Current | Forward Current | Forward Voltage | Output Type | Max Surge Current | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Configuration | Drain to Source Voltage (Vdss) | Function | Application | Max Output Power | Sensors/Transducers Type | Speed | Output Configuration | Power - Max | Diode Element Material | Power Dissipation-Max | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Max Collector Current | Reverse Voltage (DC) | Channel Type | Sensing Range | Current - Test | Current - Supply (Max) | Voltage - Output (Max) | Current - Quiescent (Iq) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Output | Voltage - Output (Min/Fixed) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Test Condition | Translator Type | Voltage - VCCA | Voltage - VCCB | Channels per Circuit | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Noise Figure (dB Typ @ f) | Frequency - Transition | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TA58L08S(FJTN,AQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1mA | 250mA | 8V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78DS05CP,T6HYF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78ds05bpfj-datasheets-3143.pdf | TO-226-3, TO-92-3 Long Body | 33V | LSTM | Fixed | Positive | 1mA | 1mA | 30mA | 5V | 1 | Over Current, Over Temperature, Over Voltage, Transient Voltage | 0.3V @ 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L008AP,WNLF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | LSTM | Fixed | Positive | 6.5mA | 150mA | 8V | 1 | Over Current | 1.7V @ 40mA Typ | 45dB (120Hz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58L09S,Q(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1mA | 250mA | 9V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA76431S(T6PSETEMF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta76431st6muratfm-datasheets-3139.pdf | TO-226-3, TO-92-3 Long Body | Adjustable | Positive | 36V | 2.495V | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58M05S(AFT,LB180 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58m12sqj-datasheets-3119.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 80mA | 1mA | 500μA | 5V | 1 | Over Current, Over Temperature, Reverse Polarity | 0.65V @ 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TCS10SPU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TCS | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Hall Effect | RoHS Compliant | 2014 | 6-SMD (5 Leads), Flat Lead | Hall Effect | 1.3mA | South Pole | 2.3V~3.6V | 5mA | South Pole | Push-Pull | Unipolar Switch | MAGNETIC FIELD SENSOR,MAGNETORESISTIVE | 2.5mT Trip, 0.3mT Release | 1.3mA | 25°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC7LX1102WBG(EL,AH | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC7LX | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 2011 | 8-UFBGA, WLCSP | Auto-Direction Sensing | 1 | 200Mbps | Bidirectional | Voltage Level | 1.2V~3.6V | 1.2V~3.6V | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TBAT54S,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2016 | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | yes | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PDSO-G3 | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.32W | 1.5 ns | Schottky | 30V | 140mA | 0.2A | 2μA @ 25V | 580mV @ 100mA | 200mA | -55°C~150°C | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS361,LJ(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2014 | SC-75, SOT-416 | 3 | 12 Weeks | 3 | EAR99 | unknown | 8541.10.00.70 | 100mW | DUAL | GULL WING | 1SS361 | Common Cathode | 2 | 100mA | 1.2V | 2A | Small Signal =< 200mA (Io), Any Speed | SILICON | 500nA | 85V | 2A | 4 ns | 4 ns | Standard | 80V | 100mA | 0.1A | 80V | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1D01FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 6 | EAR99 | 100mW | Common Anode | Other Diodes | 100mA | 920mV | 2A | Small Signal =< 200mA (Io), Any Speed | 500nA | 1.6 ns | 1.6 ns | Standard | 80V | 100mA | 80V | 500nA @ 80V | 1.2V @ 100mA | 150°C Max | 2 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS06(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2007 | SOD-128 | 2 | 12 Weeks | 2 | Silver, Tin | No | DUAL | FLAT | CMS06 | Single | 1 | 2A | 370mV | 40A | 3mA | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3mA | 30V | 40A | Schottky | 30V | 2A | 1 | 2A | 130pF @ 10V 1MHz | 3mA @ 30V | 370mV @ 2A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT60N321(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | 2007 | TO-3PL | GT60 | 170W | 2.5μs | 1000V | 60A | 2.8V @ 15V, 60A | 120A | 330ns/700ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS374(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2013 | TO-236-3, SC-59, SOT-23-3 | 11 Weeks | EAR99 | unknown | 8541.10.00.70 | 50mW | Dual | Rectifier Diodes | 200mA | Small Signal =< 200mA (Io), Any Speed | 1A | 15V | Schottky | 10V | 100mA | 20μA @ 10V | 500mV @ 100mA | 125°C Max | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN2S03T(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2014 | 4-SMD, Flat Leads | 1.2mm | 520μm | 900μm | 4 | EAR99 | No | 70mW | Dual | Other Diodes | 50mA | Small Signal =< 200mA (Io), Any Speed | 1A | 500nA | 25V | 1A | Schottky | 20V | 50mA | 500nA @ 20V | 550mV @ 50mA | 125°C Max | 2 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS413CT,L3F | Toshiba Semiconductor and Storage | $0.05 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2006 | SOD-882 | 12 Weeks | Small Signal =< 200mA (Io), Any Speed | Schottky | 20V | 50mA | 3.9pF @ 0V 1MHz | 20V | 500nA @ 20V | 550mV @ 50mA | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS416,L3M | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2013 | 2-SMD, Flat Lead | 12 Weeks | EAR99 | unknown | 100mW | 1SS416 | Single | 100mA | 380mV | Small Signal =< 200mA (Io), Any Speed | 1A | 50μA | 35V | 1A | Schottky | 30V | 100mA | 30V | 15pF @ 0V 1MHz | 50μA @ 30V | 500mV @ 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUHS10F60,H3F | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2-SMD, Flat Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 130pF @ 0V 1MHz | 60V | 40μA @ 60V | 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS03(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2010 | /files/toshiba-crs03te85lqm-datasheets-2560.pdf | SOD-123F | 2 | 12 Weeks | 2 | Silver, Tin | No | DUAL | FLAT | CRS03 | Single | 1 | 450mV | 20A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 30V | 20A | Schottky | 30V | 1A | 1A | 40pF @ 10V 1MHz | 100μA @ 30V | 450mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMG06(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cmg06te12lqm-datasheets-7856.pdf | SOD-128 | 12 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 10μA @ 600V | 1.1V @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMC02(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cmc02te12lqm-datasheets-8457.pdf | SOD-128 | 12 Weeks | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 30A | Standard | 10μA @ 400V | 1V @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMG03(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | SOD-128 | 12 Weeks | 15A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | Standard | 600V | 10μA @ 600V | 1.1V @ 2A | 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS10I40A(TE85L,QM | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | SOD-123F | 12 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 35pF @ 10V 1MHz | 40V | 60μA @ 40V | 490mV @ 700mA | 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS02(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | Non-RoHS Compliant | 2005 | 30V | 3A | SOD-128 | 170pF | Contains Lead | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | Standard | DUAL | FLAT | NOT SPECIFIED | CMS02 | 2 | 125°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F2 | 3A | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 30V | 3A | 40A | 1 | 500μA @ 30V | 400mV @ 3A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH07(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh07te16lnmbq-datasheets-2704.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 400V | 10μA @ 400V | 1.8V @ 5A | 5A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS03(TE16L,PSD,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMH08A(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2005 | SOD-128 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | DUAL | FLAT | CMH08 | 2 | Single | 1 | Rectifier Diodes | R-PDSO-F2 | 2A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 20A | 35 ns | Standard | 400V | 2A | 1 | 2A | 10μA @ 400V | 1.8V @ 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT3S113TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | 12.5dB | 900mW | 5.3V | 100mA | NPN | 200 @ 30mA 5V | 1.45dB @ 1GHz | 11.2GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4915-O,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-75, SOT-416 | 16 Weeks | yes | 100mW | 17dB ~ 23dB | 100mW | 30V | 30V | 20mA | NPN | 70 @ 1mA 6V | 2.3dB ~ 5dB @ 100MHz | 550MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3476(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -45°C | 520MHz | RoHS Compliant | 2009 | 3A | TO-271AA | Lead Free | 3 | unknown | 20W | 1 | 11.4dB | 3A | 10V | 20V | 7W | 500mA | N-Channel | 7.2V |
